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Bhim Chamlagain PhD
Bhim Chamlagain PhD
Lam Research, University of Central Florida (NSTC); Wayne State University
Verified email at wayne.edu
Title
Cited by
Cited by
Year
High Mobility WSe2 p-and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ...
Nano letters 16 (6), 3594–3601, 2014
5242014
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ...
Nano letters 16 (3), 1896-1902, 2016
4452016
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
4002013
Polarized photocurrent response in black phosphorus field-effect transistors
Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian ...
Nanoscale 6, 8978-8983, 2014
3752014
Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate
Bhim Chamlagain, Qing Li, Nirmal Jeevi Ghimire, Hsun-Jen Chuang, Meeghage ...
acs nano 8 (5), 5079–5088, 2014
2372014
Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions
T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu
Nanoscale 7 (44), 18537-18541, 2015
1512015
Plasmonic Hot Electron Induced Photocurrent Response at MoS2–Metal Junctions
T Hong, B Chamlagain, S Hu, SM Weiss, Z Zhou, YQ Xu
Acs Nano 9 (5), 5357-5363, 2015
1162015
Thermally oxidized 2D TaS2 as a high-κ gate dielectric for MoS2 field-effect transistors
B Chamlagain, Q Cui, S Paudel, MMC Cheng, PY Chen, Z Zhou
2D Materials 4 (3), 031002, 2017
762017
Scalable lateral heterojunction by chemical doping of 2D TMD thin films
B Chamlagain, SS Withanage, AC Johnston, SI Khondaker
Scientific Reports 10 (1), 12970, 2020
392020
Visualizing light scattering in silicon waveguides with black phosphorus photodetectors
T Wang, S Hu, B Chamlagain, T Hong, Z Zhou, SM Weiss, YQ Xu
Advanced Materials 28 (33), 7162-7166, 2016
392016
Low pressure sulfurization and characterization of multilayer MoS2 for potential applications in supercapacitors
S Ghosh, SS Withanage, B Chamlagain, SI Khondaker, S Harish, ...
Energy 203, 117918, 2020
272020
Gate‐Tunable Photoresponse Time in Black Phosphorus–MoS2 Heterojunctions
TS Walmsley, B Chamlagain, U Rijal, T Wang, Z Zhou, YQ Xu
Advanced Optical Materials 7 (5), 1800832, 2019
272019
Ultrathin and atomically flat transition-metal oxide: Promising building blocks for metal–insulator electronics
Q Cui, M Sakhdari, B Chamlagain, HJ Chuang, Y Liu, MMC Cheng, ...
ACS Applied Materials & Interfaces 8 (50), 34552-34558, 2016
242016
Electrical properties tunability of large area MoS2 thin films by oxygen plasma treatment
B Chamlagain, SI Khondaker
Applied Physics Letters 116 (22), 2020
172020
Rapid Degradation of the Electrical Properties of 2D MoS2 Thin Films under Long-Term Ambient Exposure
B Chamlagain, SI Khondaker
ACS omega 6 (37), 24075-24081, 2021
102021
Charge Transfer Doping of 2D PdSe2 Thin Film and Its Application in Fabrication of Heterostructures
SS Withanage, B Chamlagain, AC Johnston, SI Khondaker
Advanced Electronic Materials 7 (3), 2001057, 2021
92021
M-Ch Cheng M, Yan J, Mandrus D, Tománek D and Zhou Z 2014
HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain
Nano Lett 14, 3594, 0
7
Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 using Gold Nanostructures of Different Coverage Density
B Chamlagain, U Bhanu, S Mou, SI Khondaker
The Journal of Physical Chemistry C 124 (11), 6461-6466, 2020
42020
Synthesis of highly dense MoO2/MoS2 core–shell nanoparticles via chemical vapor deposition
SS Withanage, V Charles, B Chamlagain, R Wheeler, S Mou, ...
Nanotechnology 32 (5), 055605, 2020
32020
Charge Transfer Doping of 2D PdSe2 Thin Film and Its Application in Fabrication of Heterostructures
Sajeevi S. Withanage, Bhim Chamlagain, Ammon C. Johnston, Saiful I. Khondaker
Advanced Electronic Materials, 2001057, 2021
2021
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Articles 1–20