Articles with public access mandates - Filippo GiannazzoLearn more
Not available anywhere: 26
Delaminated graphene at silicon carbide facets: atomic scale imaging and spectroscopy
G Nicotra, QM Ramasse, I Deretzis, A La Magna, C Spinella, F Giannazzo
Acs Nano 7 (4), 3045-3052, 2013
Mandates: UK Engineering and Physical Sciences Research Council
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
Mandates: European Commission
Nitrogen soaking promotes lattice recovery in polycrystalline hybrid perovskites
A Alberti, I Deretzis, G Mannino, E Smecca, F Giannazzo, A Listorti, ...
Advanced Energy Materials 9 (12), 1803450, 2019
Mandates: Government of Italy
Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer
G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
Mandates: Government of Italy
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS2 by Conductive Atomic Force Microscopy
F Giannazzo, M Bosi, F Fabbri, E Schilirò, G Greco, F Roccaforte
physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900393, 2020
Mandates: Government of Italy
Barrier inhomogeneity in vertical Schottky diodes on free standing gallium nitride
F Roccaforte, F Giannazzo, A Alberti, M Spera, M Cannas, I Cora, B Pécz, ...
Materials Science in Semiconductor Processing 94, 164-170, 2019
Mandates: Government of Italy
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
G Greco, F Iucolano, C Bongiorno, F Giannazzo, M Krysko, M Leszczynski, ...
Applied surface science 314, 546-551, 2014
Mandates: Government of Italy
From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure
G Fisichella, G Greco, F Roccaforte, F Giannazzo
Applied Physics Letters 105 (6), 2014
Mandates: Government of Italy
Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device behavior …
G Greco, P Fiorenza, F Iucolano, A Severino, F Giannazzo, F Roccaforte
ACS applied materials & interfaces 9 (40), 35383-35390, 2017
Mandates: Government of Italy
Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy
F Giannazzo, I Shtepliuk, IG Ivanov, T Iakimov, A Kakanakova-Georgieva, ...
Nanotechnology 30 (28), 284003, 2019
Mandates: Swedish Research Council, Government of Italy
High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001)
F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, ...
Journal of crystal growth 393, 150-155, 2014
Mandates: Government of Italy
Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
E Schilirò, F Giannazzo, C Bongiorno, S Di Franco, G Greco, F Roccaforte, ...
Materials Science in Semiconductor Processing 97, 35-39, 2019
Mandates: Government of Italy
Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures
E Schiliro, P Fiorenza, G Greco, F Monforte, GG Condorelli, F Roccaforte, ...
ACS Applied Electronic Materials 4 (1), 406-415, 2021
Mandates: Government of Italy
Growth and characterization of thin Al-rich AlGaN on bulk GaN as an emitter-base barrier for hot electron transistor
P Prystawko, F Giannazzo, M Krysko, J Smalc-Koziorowska, E Schilirò, ...
Materials Science in Semiconductor Processing 93, 153-157, 2019
Mandates: Government of Italy
Conductive Atomic Force Microscopy of Two‐Dimensional Electron Systems: From AlGaN/GaN Heterostructures to Graphene and MoS2
F Giannazzo, G Fisichella, G Greco, P Fiorenza, F Roccaforte
Conductive Atomic Force Microscopy: Applications in Nanomaterials, 163-185, 2017
Mandates: Government of Italy
Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides
A Sciuto, A La Magna, GGN Angilella, R Pucci, G Greco, F Roccaforte, ...
physica status solidi (RRL)–Rapid Research Letters 14 (2), 1900399, 2020
Mandates: Government of Italy
Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
P Fiorenza, E Schilirò, G Greco, M Vivona, M Cannas, F Giannazzo, ...
Applied Surface Science 579, 152136, 2022
Mandates: Government of Italy
Manipulation of epitaxial graphene towards novel properties and applications
I Shtepliuk, IG Ivanov, M Vagin, Z Khan, T Iakimov, N Pliatsikas, ...
Materials Today: Proceedings 20, 37-45, 2020
Mandates: Swedish Research Council
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
P Fiorenza, L Maiolo, G Fortunato, M Zielinski, F La Via, F Giannazzo, ...
Journal of Applied Physics 132 (24), 2022
Mandates: European Commission
Fabrication and characterization of ohmic contacts to 3C-SiC layers grown on silicon
M Spera, G Greco, R Lo Nigro, S Di Franco, D Corso, P Fiorenza, ...
Materials Science Forum 963, 485-489, 2019
Mandates: European Commission
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