The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN D Zanato, S Gokden, N Balkan, BK Ridley, WJ Schaff Semiconductor science and technology 19 (3), 427, 2004 | 209 | 2004 |
Hot electrons in semiconductors: physics and devices N Balkan Clarendon Press, 1998 | 109 | 1998 |
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method SB Lisesivdin, A Yildiz, N Balkan, M Kasap, S Ozcelik, E Ozbay Journal of Applied Physics 108 (1), 2010 | 86 | 2010 |
Optical properties of GaNAs and GaInAsN quantum wells RJ Potter, N Balkan Journal of Physics: Condensed Matter 16 (31), S3387, 2004 | 84 | 2004 |
Hot electron cooling rates via the emission of LO-phonons in InN D Zanato, N Balkan, BK Ridley, G Hill, WJ Schaff Semiconductor science and technology 19 (8), 1024, 2004 | 78 | 2004 |
Energy and momentum relaxation of hot electrons in GaN/AlGaN N Balkan, MC Arikan, S Gokden, V Tilak, B Schaff, RJ Shealy Journal of Physics: Condensed Matter 14 (13), 3457, 2002 | 67 | 2002 |
Warm-electron power loss in GaAs/As multiple quantum wells: Well-width dependence N Balkan, H Celik, AJ Vickers, M Cankurtaran Physical Review B 52 (24), 17210, 1995 | 66 | 1995 |
Well-width dependence of the in-plane effective mass and quantum lifetime of electrons in multiple quantum wells H Çelik, M Cankurtaran, A Bayrakli, E Tiras, N Balkan Semiconductor science and technology 12 (4), 389, 1997 | 61 | 1997 |
Intense field effects on shallow donor impurities in graded quantum wells H Sari, E Kasapoglu, I Sokmen, N Balkan Semiconductor science and technology 18 (6), 470, 2003 | 60 | 2003 |
Negative differential resistance and instabilities in 2-D semiconductors N Balkan, BK Ridley, AJ Vickers Springer Science & Business Media, 2012 | 57 | 2012 |
Semiconductor Research: Experimental Techniques A Patane, N Balkan Springer Science & Business Media, 2012 | 53 | 2012 |
S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides S Mazzucato, RJ Potter, A Erol, N Balkan, PR Chalker, TB Joyce, ... Physica E: Low-dimensional Systems and Nanostructures 17, 242-244, 2003 | 53 | 2003 |
Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells N Balkan, BK Ridley, M Emeny, I Goodridge Semiconductor science and technology 4 (10), 852, 1989 | 46 | 1989 |
Interaction strength between the highly localised nitrogen states and the extended semiconductor matrix states in GaInNAs RJ Potter, N Balkan, X Marie, H Carrere, E Bedel, G Lacoste physica status solidi (a) 187 (2), 623-632, 2001 | 44 | 2001 |
Hot-electron transport in GaAs/Ga 1− x Al x As quantum-well structures R Gupta, N Balkan, BK Ridley Physical Review B 46 (12), 7745, 1992 | 44 | 1992 |
Hot electron transport in GaAs quantum wells: non-drifting hot phonons N Balkan, R Gupta, ME Daniels, BK Ridley, M Emeny Semiconductor Science and Technology 5 (9), 986, 1990 | 42 | 1990 |
The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure S Gökden, R Baran, N Balkan, S Mazzucato Physica E: Low-dimensional Systems and Nanostructures 24 (3-4), 249-256, 2004 | 41 | 2004 |
Current instabilities in GaAs/GaAlAs single and multiple quantum wells N Balkan, BK Ridley, JS Roberts Superlattices and microstructures 5 (4), 539-544, 1989 | 40 | 1989 |
Electronic transport in n-and p-type modulation doped GaxIn1− xNyAs1− y/GaAs quantum wells Y Sun, N Balkan, M Aslan, SB Lisesivdin, H Carrere, MC Arikan, X Marie Journal of Physics: Condensed Matter 21 (17), 174210, 2009 | 38 | 2009 |
Electrical instabilities in GaAs/AlGaAs quantum wells: acoustoelectric effects? N Balkan, BK Ridley Semiconductor Science and Technology 3 (5), 507, 1988 | 34 | 1988 |