| A synchronic phonology of Mandarin Chinese CC Cheng Walter de Gruyter, 2011 | 583 | 2011 |
| IMPLEMENTATION OF PHONOLOGICAL CHANGE: THE SHUÄNG-FENG CHINESE CASE1 SY William, CC Cheng The lexicon in phonological change, 148, 1977 | 184 | 1977 |
| Language & linguistics in the People's Republic of China C Cheng, WP Lehmann (No Title), 1975 | 142 | 1975 |
| A quantitative study of Chinese tones C Cheng Journal of Chinese linguistics, 93-110, 1973 | 109 | 1973 |
| English stresses and Chinese tones in Chinese sentences CC Cheng Phonetica 18 (2), 77-88, 1968 | 92 | 1968 |
| Tone change in Chao-zhou Chinese: A study in lexical diffusion CC Cheng, WSY Wang The lexicon in phonological change, 86-100, 1977 | 77 | 1977 |
| Measuring relationship among dialects: DOC and related resources CC Cheng International Journal of Computational Linguistics & Chinese Language …, 1997 | 70 | 1997 |
| Ikorovere Makua tonology (part I) CC Cheng, CW Kisseberth Studies in the Linguistic sciences 9 (1), 31-63, 1979 | 63 | 1979 |
| Characteristics of Pd/InGaP Schottky diodes hydrogen sensors KW Lin, HI Chen, HM Chuang, CY Chen, CT Lu, CC Cheng, WC Liu IEEE Sensors Journal 4 (1), 72-79, 2004 | 62 | 2004 |
| Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT) KH Yu, HM Chuang, KW Lin, SY Cheng, CC Cheng, JY Chen, WC Liu IEEE Transactions on Electron Devices 49 (10), 1687-1693, 2002 | 57 | 2002 |
| 从华北克拉通中, 西部结构的区域差异性探讨克拉通破坏 陈凌， 危自根， 程骋 地学前缘, 212-228, 2010 | 56 | 2010 |
| Investigation of temperature-dependent characteristics of an n/sup+/-InGaAs/n-GaAs composite doped channel HFET WC Liu, KH Yu, RC Liu, KW Lin, KP Lin, CH Yen, CC Cheng, KB Thei IEEE Transactions on Electron Devices 48 (12), 2677-2683, 2001 | 54 | 2001 |
| Hydrogen sensing characteristics of a Pt–oxide–Al0. 3Ga0. 7As MOS Schottky diode CC Cheng, YY Tsai, KW Lin, HI Chen, CT Lu, WC Liu Sensors and Actuators B: Chemical 99 (2-3), 425-430, 2004 | 46 | 2004 |
| A new Pt/oxide/In/sub 0.49/Ga/sub 0.51/P MOS Schottky diode hydrogen sensor WC Liu, KW Lin, HI Chen, CK Wang, CC Cheng, SY Cheng, CT Lu IEEE Electron Device Letters 23 (11), 640-642, 2002 | 46 | 2002 |
| Investigation of temperature-dependent performances of InP/In0. 53Ga0. 34Al0. 13As heterojunction bipolar transistors HJ Pan, WC Wang, KB Thei, CC Cheng, KH Yu, KW Lin, CZ Wu, WC Liu Semiconductor science and technology 15 (12), 1101, 2000 | 39 | 2000 |
| Quantifying dialect mutual intelligibility CC Cheng New horizons in Chinese linguistics, 269-292, 1996 | 36 | 1996 |
| Quantifying affinity among Chinese dialects CC Cheng Journal of Chinese Linguistics monograph series, 76-110, 1991 | 35 | 1991 |
| Pd-oxide-Al/sub 0.24/Ga/sub 0.76/As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor CC Cheng, YY Tsai, KW Lin, HI Chen, WH Hsu, CW Hung, RC Liu, ... IEEE Sensors Journal 6 (2), 287-292, 2006 | 34 | 2006 |
| Hydrogen sensing characteristics of Pd-and Pt-Al0. 3Ga0. 7As metal–semiconductor (MS) Schottky diodes CC Cheng, YY Tsai, KW Lin, HI Chen, WH Hsu, HM Chuang, CY Chen, ... Semiconductor science and technology 19 (6), 778, 2004 | 33 | 2004 |
| Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes YY Tsai, KW Lin, CT Lu, HI Chen, HM Chuang, CY Chen, CC Cheng, ... IEEE Transactions on Electron Devices 50 (12), 2532-2539, 2003 | 33 | 2003 |
Helena Hong GaoNanyang Technological University (08/2006-06/2022)Verified email at ntu.edu.sg