Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures J Son, J Kwon, SP Kim, Y Lv, J Yu, JY Lee, H Ryu, K Watanabe, ... Nature communications 9 (1), 3988, 2018 | 90 | 2018 |
Tailoring surface properties via functionalized hydrofluorinated graphene compounds J Son, N Buzov, S Chen, D Sung, H Ryu, J Kwon, SP Kim, S Namiki, J Xu, ... Advanced Materials 31 (39), 1903424, 2019 | 30 | 2019 |
Tailoring single-and double-sided fluorination of bilayer graphene via substrate interactions J Son, H Ryu, J Kwon, S Huang, J Yu, J Xu, K Watanabe, T Taniguchi, E Ji, ... Nano letters 21 (2), 891-898, 2020 | 28 | 2020 |
Anomalous Dimensionality‐Driven Phase Transition of MoTe2 in Van der Waals Heterostructure H Ryu, Y Lee, HJ Kim, SH Kang, Y Kang, K Kim, J Kim, BE Janicek, ... Advanced Functional Materials 31 (51), 2107376, 2021 | 25 | 2021 |
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth H Ryu, H Park, JH Kim, F Ren, J Kim, GH Lee, SJ Pearton Applied Physics Reviews 9 (3), 2022 | 18 | 2022 |
Multioperation‐mode light‐emitting field‐effect transistors based on van der Waals heterostructure J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ... Advanced Materials 32 (43), 2003567, 2020 | 16 | 2020 |
In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2 CH Lee, H Ryu, G Nolan, Y Zhang, Y Lee, S Oh, H Cheong, K Watanabe, ... Nano letters 23 (2), 677-684, 2023 | 14 | 2023 |
Laser‐Induced Phase Transition and Patterning of hBN‐Encapsulated MoTe2 H Ryu, Y Lee, JH Jeong, Y Lee, Y Cheon, K Watanabe, T Taniguchi, ... Small 19 (17), 2205224, 2023 | 12 | 2023 |
Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization Y Jung, H Ryu, H Kim, D Moon, J Joo, SC Hong, J Kim, GH Lee ACS nano 17 (8), 7865-7871, 2023 | 10 | 2023 |
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors J Kwon, M Seol, J Yoo, H Ryu, DS Ko, MH Lee, EK Lee, MS Yoo, GH Lee, ... Nature Electronics, 1-9, 2024 | 8 | 2024 |
Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers JH Baek, HG Kim, SY Lim, SC Hong, Y Chang, H Ryu, Y Jung, H Jang, ... Nature materials 22 (12), 1463-1469, 2023 | 8 | 2023 |
Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors H Ryu, DH Kim, J Kwon, SK Park, W Lee, H Seo, K Watanabe, ... Advanced Electronic Materials 8 (10), 2101370, 2022 | 8 | 2022 |
Single-crystalline metallic films induced by van der Waals epitaxy on black phosphorus Y Lee, H Kim, TK Yun, JC Kim, S Lee, SJ Yang, M Jang, D Kim, H Ryu, ... Chemistry of Materials 33 (10), 3593-3601, 2021 | 8 | 2021 |
Improved crystallinity of graphene grown on Cu/Ni (111) through sequential mobile hot-wire heat treatment M Choi, J Baek, H Ryu, H Lee, J Byen, SG Hong, BJ Kim, S Cho, JY Song, ... Nano letters 22 (13), 5198-5206, 2022 | 4 | 2022 |
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure H Ryu, J Kwon, S Yang, K Watanabe, T Taniguchi, YD Kim, J Hone, ... ACS Photonics 8 (12), 3455-3461, 2021 | 3 | 2021 |
The future of two-dimensional semiconductors beyond Moore’s law KS Kim, J Kwon, H Ryu, C Kim, H Kim, EK Lee, D Lee, S Seo, NM Han, ... Nature Nanotechnology, 1-12, 2024 | 1 | 2024 |
Quasi-van der waals epitaxial recrystallization of a gold thin film into crystallographically aligned single crystals Y Lee, Y Chang, H Ryu, JH Kim, K Watanabe, T Taniguchi, M Kim, ... ACS Applied Materials & Interfaces 15 (4), 6092-6097, 2022 | 1 | 2022 |
In-situ Imaging of Anisotropic Layer-by-layer Phase Transition in Few-layer MoTe2 CH Lee, H Ryu, G Nolan, Y Zhang, Y Lee, K Kim, GH Lee, PY Huang Microscopy and Microanalysis 28 (S1), 2320-2322, 2022 | 1 | 2022 |
Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020) J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ... Advanced Materials 32 (43), 2070320, 2020 | 1 | 2020 |
Gate structuring on bilayer transition metal dichalcogenides enables ultrahigh current density J Kim, J Kwon, KY Kim, D Jang, MS Yoo, A Jung, WI Choi, Y Cho, C Kim, ... | | 2024 |