Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA Y Hirose, A Kahn, V Aristov, P Soukiassian, V Bulovic, SR Forrest Physical Review B 54 (19), 13748, 1996 | 453 | 1996 |
Graphene synthesis on cubic SiC/Si wafers. Perspectives for mass production of graphene-based electronic devices VY Aristov, G Urbanik, K Kummer, DV Vyalikh, OV Molodtsova, ... Nano letters 10 (3), 992-995, 2010 | 259 | 2010 |
Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride Y Hirose, A Kahn, V Aristov, P Soukiassian Applied Physics Letters 68 (2), 217-219, 1996 | 172 | 1996 |
Transition metal phthalocyanines: Insight into the electronic structure from soft x-ray spectroscopy T Kroll, R Kraus, R Schönfelder, VY Aristov, OV Molodtsova, P Hoffmann, ... The Journal of Chemical Physics 137 (5), 2012 | 116 | 2012 |
Temperature-Induced Semiconducting Reversible Phase Transition on the -SiC(100) Surface VY Aristov, L Douillard, O Fauchoux, P Soukiassian Physical review letters 79 (19), 3700, 1997 | 93 | 1997 |
Spin and orbital ground state of Co in cobalt phthalocyanine T Kroll, VY Aristov, OV Molodtsova, YA Ossipyan, DV Vyalikh, B Buchner, ... The Journal of Physical Chemistry A 113 (31), 8917-8922, 2009 | 80 | 2009 |
Chemistry and electronic properties of metal contacts on an organic molecular semiconductor Y Hirose, CI Wu, V Aristov, P Soukiassian, A Kahn Applied surface science 113, 291-298, 1997 | 76 | 1997 |
Surface core-level shifts of Si (111) 7× 7: A fundamental reassessment G Le Lay, M Göthelid, TM Grehk, M Björkquist, UO Karlsson, VY Aristov Physical Review B 50 (19), 14277, 1994 | 72 | 1994 |
Experimental evidence for 400-meV valence-band dispersion in solid G Gensterblum, JJ Pireaux, PA Thiry, R Caudano, T Buslaps, RL Johnson, ... Physical Review B 48 (19), 14756, 1993 | 68 | 1993 |
Chemistry and electronic properties of a metal-organic semiconductor interface: In on CuPc VY Aristov, OV Molodtsova, VM Zhilin, DV Vyalikh, M Knupfer Physical Review B—Condensed Matter and Materials Physics 72 (16), 165318, 2005 | 66 | 2005 |
Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum VY Aristov, G Le Lay, P Soukiassian, K Hricovini, JE Bonnet, J Osvald, ... Europhysics Letters 26 (5), 359, 1994 | 66 | 1994 |
Electronic properties of potassium-doped CuPc OV Molodtsova, VM Zhilin, DV Vyalikh, VY Aristov, M Knupfer Journal of applied physics 98 (9), 2005 | 57 | 2005 |
The electronic structure of cobalt phthalocyanine VV Maslyuk, VY Aristov, OV Molodtsova, DV Vyalikh, VM Zhilin, ... Applied Physics A 94, 485-489, 2009 | 56 | 2009 |
Fabrication of [001]-oriented tungsten tips for high resolution scanning tunneling microscopy AN Chaika, NN Orlova, VN Semenov, EY Postnova, SA Krasnikov, ... Scientific reports 4 (1), 3742, 2014 | 54 | 2014 |
Engineering of the energy level alignment at organic semiconductor interfaces by intramolecular degrees of freedom: Transition metal phthalocyanines M Grobosch, VY Aristov, OV Molodtsova, C Schmidt, BP Doyle, ... The Journal of Physical Chemistry C 113 (30), 13219-13222, 2009 | 54 | 2009 |
Chemisorption of bromine on cleaved silicon (111) surfaces: an X-ray standing wave interference spectrometric analysis BN Dev, V Aristov, N Hertel, T Thundat, WM Gibson Surface science 163 (2-3), 457-477, 1985 | 54 | 1985 |
l, M. Nielsen, E. Findeisen, and RIG Uhrberg G Le Lay, VY Aristov, L Seehofer, T Buslaps, RL Johnson, M Gothelid, ... Surf. Sci 307 (309), 280, 1994 | 53 | 1994 |
Giant band bending induced by Ag on InAs (110) surfaces at low temperature VY Aristov, G Le Lay, K Hricovini, JE Bonnet Physical Review B 47 (4), 2138, 1993 | 53 | 1993 |
Electron accumulation layer on clean In-terminated InAs (0 0 1)(4× 2)-c (8× 2) surface P De Padova, C Quaresima, P Perfetti, R Larciprete, R Brochier, C Richter, ... Surface science 482, 587-592, 2001 | 51 | 2001 |
Pairs of Si atomic lines self-assembling on the β-SiC (100) surface: An 8× 2 reconstruction L Douillard, VY Aristov, F Semond, P Soukiassian Surface science 401 (1), L395-L400, 1998 | 51 | 1998 |