Mim Lal Nakarmi

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Hongxing Jiang (江红星）Ed Whitacre Endowed Chair and P. W. Horn Distinguished Professor of ECE, Texas Tech UniversityDirección de correo verificada de ttu.edu
Jingyu Lin (林景瑜）Linda Whitacre Endowed Chair & Horn Distinguished Professor of ECE, Texas Tech UniversityDirección de correo verificada de ttu.edu
Neeraj NepalUS Naval Research LaboratoryDirección de correo verificada de nrl.navy.mil
Jing Li (李景）Research Professor of Nanophotonics center, Texas Tech UniversityDirección de correo verificada de ttu.edu
Ram RaiSUNY Buffalo StateDirección de correo verificada de buffalostate.edu
Zhaoyang FanProfessor of Electrical Engineering, Arizona State UniversityDirección de correo verificada de asu.edu
Kai ZhuNational Renewable Energy LaboratoryDirección de correo verificada de nrel.gov
Nikesh MaharjanBrooklyn College and the Graduate Center of CUNYDirección de correo verificada de gradcenter.cuny.edu
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateDirección de correo verificada de ncsu.edu
Suhuai WeiEastern Institute of Technology, Ningbo, ChinaDirección de correo verificada de eitech.edu.cn
Jagat ShakyaIntel CorporationDirección de correo verificada de ksu.edu
Rajendra DahalIntel Corporation
Ashok SedhainPrincipal Process Engineer Metrology, Globalfoundries

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Mim Lal Nakarmi

Professor of Physics, Brooklyn College-CUNY

Dirección de correo verificada de brooklyn.cuny.edu - Página principal

Wide bandgap semiconductor Photonics optoelectronics material science


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Band structure and fundamental optical transitions in wurtzite AlN J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei Applied Physics Letters 83 (25), 5163-5165, 2003	466	2003
Unique optical properties of AlGaN alloys and related ultraviolet emitters KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 84 (25), 5264-5266, 2004	428	2004
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang Applied physics letters 83 (5), 878-880, 2003	360	2003
200nm deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 89 (21), 2006	242	2006
Optical and electrical properties of Mg-doped p-type J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 80 (7), 1210-1212, 2002	237	2002
Temperature and compositional dependence of the energy band gap of AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 87 (24), 2005	225	2005
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys KB Nam, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 86 (22), 2005	223	2005
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys ML Nakarmi, N Nepal, JY Lin, HX Jiang Applied Physics Letters 94 (9), 2009	213	2009
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping ML Nakarmi, KH Kim, J Li, JY Lin, HX Jiang Applied physics letters 82 (18), 3041-3043, 2003	186	2003
Electrical and optical properties of Mg-doped Al0. 7Ga0. 3N alloys ML Nakarmi, KH Kim, M Khizar, ZY Fan, JY Lin, HX Jiang Applied Physics Letters 86 (9), 2005	184	2005
Transport properties of highly conductive n-type Al-rich AlxGa1− xN (x⩾ 0.7) ML Nakarmi, KH Kim, K Zhu, JY Lin, HX Jiang Applied Physics Letters 85 (17), 3769-3771, 2004	182	2004
Photoluminescence studies of impurity transitions in AlGaN alloys N Nepal, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 89 (9), 2006	179	2006
Correlation between optical and electrical properties of Mg-doped AlN epilayers ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang Applied physics letters 89 (15), 2006	170	2006
Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied Physics Letters 90 (24), 2007	164	2007
Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 82 (11), 1694-1696, 2003	139	2003
Band-edge photoluminescence of AlN epilayers J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 81 (18), 3365-3367, 2002	136	2002
Achieving highly conductive AlGaN alloys with high Al contents KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 81 (6), 1038-1040, 2002	124	2002
AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers KH Kim, ZY Fan, M Khizar, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 85 (20), 4777-4779, 2004	115	2004
Band-edge exciton states in AlN single crystals and epitaxial layers L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ... Applied physics letters 85 (19), 4334-4336, 2004	109	2004
Optical and electronic properties of NiFe₂O₄ and CoFe₂O₄ thin films RC Rai, S Wilser, M Guminiak, B Cai, ML Nakarmi Applied Physics A 106, 207-211, 2012	93	2012

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