Zero-phonon line and fine structure of the yellow luminescence band in GaN MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ... Physical Review B 94 (3), 035201, 2016 | 64 | 2016 |
Determination of carrier diffusion length in GaN S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ... Journal of Applied Physics 117 (01), 3106, 2015 | 50 | 2015 |
InGaN light-emitting diodes: Efficiency-limiting processes at high injection V Avrutin, S din Ahmad Hafiz, F Zhang, Ü Özgür, H Morkoç, A Matulionis Journal of Vacuum Science & Technology A 31 (05), 0809, 2013 | 50 | 2013 |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance X Li, S Okur, F Zhang, V Avrutin, Ü Özgür, H Morkoç, SM Hong, SH Yen, ... Journal of Applied Physics 111 (06), 3112, 2012 | 42 | 2012 |
Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates N Izyumskaya, F Zhang, S Okur, T Selden, V Avrutin, Ü Özgür, S Metzner, ... Journal of Applied Physics 114 (11), 3502, 2013 | 34 | 2013 |
Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells D Rosales, B Gil, T Bretagnon, B Guizal, F Zhang, S Okur, M Monavarian, ... Journal of Applied Physics 115 (07), 3510, 2014 | 26 | 2014 |
The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes F Zhang, X Li, S Hafiz, S Okur, V Avrutin, Ü Özgür, H Morkoç, A Matulionis Applied Physics Letters 103 (05), 1122, 2013 | 25 | 2013 |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions X Li, S Okur, F Zhang, SA Hafiz, V Avrutin, Ü Özgür, H Morkoç, ... Applied Physics Letters 101 (04), 1115, 2012 | 21 | 2012 |
Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers F Zhang, N Can, S Hafiz, M Monavarian, S Das, V Avrutin, Ü Özgür, ... Applied Physics Letters 106 (18), 1105, 2015 | 20 | 2015 |
Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects CY Zhu, M Wu, C Kayis, F Zhang, X Li, RA Ferreyra, A Matulionis, ... Applied Physics Letters 101 (10), 3502, 2012 | 20 | 2012 |
Hexagonal-based pyramid void defects in GaN and InGaN AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, HY Liu, N Izyumskaya, ... Journal of Applied Physics 111 (02), 3517, 2012 | 19 | 2012 |
On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer X Li, F Zhang, S Okur, V Avrutin, SJ Liu, Ü Özgür, H Morkoç, SM Hong, ... Physic status solidi (a) 208 (12), 2011 | 19 | 2011 |
Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells D Rosales, B Gil, T Bretagnon, B Guizal, N Izyumskaya, M Monavarian, ... Journal of Applied Physics 116 (09), 3517, 2014 | 18 | 2014 |
Saga of efficiency degradation at high injection in InGaN light emitting diodes V AVRUTIN, SA HAFIZ, F ZHANG, Ü ÖZGÜR, E BELLOTTI, F BERTAZZI, ... Turkish Journal of Physics 38 (3), 269, 2014 | 16 | 2014 |
Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes M Monavarian, S Metzner, N Izyumskaya, S Okur, F Zhang, N Can, S Das, ... SPIE Proceedings 9363, 93632P, 2015 | 15 | 2015 |
Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence S Okur, S Metzner, N Izyumskaya, F Zhang, V Avrutin, C Karbaum, ... Applied Physics Letters 103 (21), 1908, 2013 | 15 | 2013 |
Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose AB Yankovicha, AV Kvit, X Li, F Zhang, V Avrutin, H Liu, N Izyumskaya, ... Microscopy and Microanalysis 20 (3), 864, 2014 | 14 | 2014 |
Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells T Malinauskas, A Kadys, T Grinys, S Nargelas, R Aleksiejūnas, ... SPIE Proceedings 8262, 82621S, 2012 | 12 | 2012 |
Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients N Can, S Okur, M Monavarian, F Zhang, V Avrutin, H Morkoç, A Teke, ... SPIE Proceedings 9363, 93632U, 2015 | 11 | 2015 |
Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel L Ardaravičius, O Kiprijanovič, J Liberis, A Matulionis, X Li, F Zhang, ... Semiconductor Science and Technology 27 (12), 122001, 2012 | 9 | 2012 |