Artículos con órdenes de acceso público - Fan ZhangMás información
No disponibles en ningún lugar: 2
Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
M Monavarian, S Metzner, N Izyumskaya, S Okur, F Zhang, N Can, S Das, ...
SPIE Proceedings 9363, 93632P, 2015
Órdenes: German Research Foundation
Enhancement of optical and structural quality of semipolar (11-22) GaN by introducing nanoporous SiNx interlayers
M Monavarian, S Metzner, N Izyumskaya, M Müller, S Okur, F Zhang, ...
SPIE Proceedings 9363, 93632I, 2015
Órdenes: German Research Foundation
Disponibles en algún lugar: 8
Zero-phonon line and fine structure of the yellow luminescence band in GaN
MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ...
Physical Review B 94 (3), 035201, 2016
Órdenes: US National Science Foundation
Determination of carrier diffusion length in GaN
S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ...
Journal of Applied Physics 117 (01), 3106, 2015
Órdenes: German Research Foundation
Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates
N Izyumskaya, F Zhang, S Okur, T Selden, V Avrutin, Ü Özgür, S Metzner, ...
Journal of Applied Physics 114 (11), 3502, 2013
Órdenes: German Research Foundation
Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence
S Okur, S Metzner, N Izyumskaya, F Zhang, V Avrutin, C Karbaum, ...
Applied Physics Letters 103 (21), 1908, 2013
Órdenes: German Research Foundation
Determination of carrier diffusion length in p- and n-type GaN
S Hafiz, S Metzner, F Zhang, M Monavarian, V Avrutin, H Morkoç, ...
SPIE Proceedings 8986, 89862C, 2014
Órdenes: German Research Foundation
Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates
N Izyumskaya, SJ Liu, V Avrutin, S Okur, F Zhang, Ü Özgür, S Metzner, ...
SPIE Proceedings 8262, 826224, 2012
Órdenes: German Research Foundation
Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach
N Izyumskaya, S Okur, F Zhang, M Monavarian, V Avrutin, Ü Özgür, ...
SPIE Proceedings 8986, 898628, 2014
Órdenes: German Research Foundation
Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si
S Okur, N Izyumskaya, F Zhang, V Avrutin, S Metzner, C Karbaum, ...
SPIE Proceedings 8986 (89862B), 2014
Órdenes: German Research Foundation
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