Artículos con órdenes de acceso público - Hadis MorkoçMás información
No disponibles en ningún lugar: 15
Optically transparent antennas and filters: A smart city concept to alleviate infrastructure and network capacity challenges
RB Green, M Guzman, N Izyumskaya, B Ullah, S Hia, J Pitchford, ...
IEEE Antennas and propagation magazine 61 (3), 37-47, 2019
Órdenes: US Department of Defense
Optical and electrical properties of ZnMnO layers grown by peroxide MBE
V Avrutin, N Izyumskaya, Ü Özgür, A El-Shaer, H Lee, W Schoch, F Reuss, ...
Superlattices and Microstructures 39 (1-4), 291-298, 2006
Órdenes: German Research Foundation
Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
M Monavarian, S Metzner, N Izyumskaya, S Okur, F Zhang, N Can, S Das, ...
Gallium Nitride Materials and Devices X 9363, 340-345, 2015
Órdenes: German Research Foundation
An investigation of the structural and insulating properties of cubic GaN for GaAs–GaN semiconductor–insulator devices
S Strite, DSL Mui, G Martin, Z Li, DJ Smith, H Morkoç
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth …, 2020
Órdenes: US National Science Foundation, US Department of Defense
Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells
M Monavarian, D Rosales, B Gil, N Izyumskaya, S Das, Ü Özgür, ...
Gallium Nitride Materials and Devices XI 9748, 235-248, 2016
Órdenes: US National Science Foundation
Optical properties of nonpolar (1-100) and semipolar (1-101) GaN grown by MOCVD on Si patterned substrates
N Izyumskaya, SJ Liu, S Okur, M Wu, V Avrutin, Ü Özgür, S Metzner, ...
Gallium Nitride Materials and Devices VI 7939, 315-323, 2011
Órdenes: German Research Foundation
Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates
K Ding, V Avrutin, N Izyumskaya, S Metzner, F Bertram, J Christen, ...
Gallium Nitride Materials and Devices XIII 10532, 6-21, 2018
Órdenes: US National Science Foundation, German Research Foundation
Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices
MB Ullah, M Toporkov, V Avrutin, Ü Özgür, DJ Smith, H Morkoç
Oxide-based Materials and Devices VIII 10105, 94-107, 2017
Órdenes: US Department of Defense
Hot-electron noise spectroscopy for HFET channels
E Šermukšnis, J Liberis, A Šimukovič, A Matulionis, MB Ullah, M Toporkov, ...
2017 International Conference on Noise and Fluctuations (ICNF), 1-4, 2017
Órdenes: US Department of Defense, Research Council of Lithuania
A vertically integrated driver for light-emitting devices utilizing controllable electro-optical positive feedback
MS Ünlü, S Strite, A Salvador, H Morkoç
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth …, 2020
Órdenes: US Department of Defense
Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency
M Ramonas, J Liberis, A Šimukovič, E Šermukšnis, A Matulionis, V Avrutin, ...
Journal of Applied Physics 128 (5), 2020
Órdenes: Research Council of Lithuania
Electrical properties of BeMgZnO/ZnO heterostructures with high-density two-dimensional electron gas
K Ding, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç, E Šermukšnis, ...
Oxide-based Materials and Devices X 10919, 45-54, 2019
Órdenes: US Department of Defense, Research Council of Lithuania
Demonstration of thick phase-pure β-Ga2O3 on a c-plane sapphire substrate using MOCVD
MU Jewel, S Hasan, SR Crittenden, V Avrutin, Ü Özgür, H Morkoç, ...
Oxide-based Materials and Devices XIV 12422, 18-22, 2023
Órdenes: US National Science Foundation
Reduction in the outdiffusion into epitaxial Ge grown on GaAs using a thin AlAs interlayer
AL Demirel, S Strite, A Agarwal, MS Ünlü, DSL Mui, A Rockett, H Morkoç
Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth …, 2020
Órdenes: US National Science Foundation, US Department of Energy, US Department of …
Recent developments in heterostructure transistors
H Morkoç, SN Mohammad
Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium …, 2020
Órdenes: US National Science Foundation, US Department of Energy, US Department of …
Disponibles en algún lugar: 39
ZnO devices and applications: a review of current status and future prospects
Ü Özgür, D Hofstetter, H Morkoc
Proceedings of the IEEE 98 (7), 1255-1268, 2010
Órdenes: Swiss National Science Foundation
Two charge states of the acceptor in GaN: Evidence from photoluminescence
MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ...
Physical Review B 98 (12), 125207, 2018
Órdenes: US National Science Foundation
Zero-phonon line and fine structure of the yellow luminescence band in GaN
MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ...
Physical Review B 94 (3), 035201, 2016
Órdenes: US National Science Foundation
Determination of carrier diffusion length in GaN
S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ...
Journal of Applied Physics 117 (1), 2015
Órdenes: German Research Foundation
Thermal quenching of the yellow luminescence in GaN
MA Reshchikov, NM Albarakati, M Monavarian, V Avrutin, H Morkoç
Journal of Applied Physics 123 (16), 2018
Órdenes: US National Science Foundation
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