Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications K Shinohara, DC Regan, Y Tang, AL Corrion, DF Brown, JC Wong, ...
IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013
529 2013 Ultrahigh-Speed GaN High-Electron-Mobility Transistors With of 454/444 GHz Y Tang, K Shinohara, D Regan, A Corrion, D Brown, J Wong, A Schmitz, ...
IEEE Electron Device Letters 36 (6), 549-551, 2015
340 2015 N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
250 2013 Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ...
Semiconductor Science and Technology 29 (11), 113001, 2014
233 2014 Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition S Keller, NA Fichtenbaum, F Wu, D Brown, A Rosales, SP DenBaars, ...
Journal of Applied Physics 102 (8), 2007
212 2007 Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth S Dasgupta, N Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra
Applied physics letters 96 (14), 2010
161 2010 220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ...
2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010
160 2010 92–96 GHz GaN power amplifiers M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ...
2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012
139 2012 Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ...
2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011
136 2011 Self-aligned-gate GaN-HEMTs with heavily-doped n+ -GaN ohmic contacts to 2DEG K Shinohara, D Regan, A Corrion, D Brown, Y Tang, J Wong, G Candia, ...
2012 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2012
134 2012 High quality AlN grown on SiC by metal organic chemical vapor deposition Z Chen, S Newman, D Brown, R Chung, S Keller, UK Mishra, ...
Applied Physics Letters 93 (19), 2008
121 2008 GaN technology for E, W and G-band applications A Margomenos, A Kurdoghlian, M Micovic, K Shinohara, DF Brown, ...
2014 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2014
117 2014 W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE DF Brown, A Williams, K Shinohara, A Kurdoghlian, I Milosavljevic, ...
2011 international electron devices meeting, 19.3. 1-19.3. 4, 2011
109 2011 High frequency GaN HEMTs for RF MMIC applications M Micovic, DF Brown, D Regan, J Wong, Y Tang, F Herrault, D Santos, ...
2016 IEEE International Electron Devices Meeting (IEDM), 3.3. 1-3.3. 4, 2016
104 2016 Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With of 260 GHz K Shinohara, D Regan, I Milosavljevic, AL Corrion, DF Brown, ...
IEEE Electron Device Letters 32 (8), 1074-1076, 2011
100 2011 Impact of Plasma Treatment on GaN R Chu, CS Suh, MH Wong, N Fichtenbaum, D Brown, L McCarthy, ...
IEEE electron device letters 28 (9), 781-783, 2007
79 2007 Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ...
Solid-State Electronics 80, 19-22, 2013
76 2013 Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz Y Pei, R Chu, NA Fichtenbaum, Z Chen, D Brown, L Shen, S Keller, ...
Japanese Journal of Applied Physics 46 (12L), L1087, 2007
75 2007 Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm and 112-GHz AL Corrion, K Shinohara, D Regan, I Milosavljevic, P Hashimoto, ...
IEEE electron device letters 31 (10), 1116-1118, 2010
74 2010 Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts R Chu, L Shen, N Fichtenbaum, D Brown, S Keller, UK Mishra
IEEE electron device letters 29 (4), 297-299, 2008
74 2008