מאמרים עם הרשאות לגישה ציבורית - Johann Peter Reithmaierלמידע נוסף
לא זמינים באתר כלשהו: 45
Temperature-Insensitive High-Speed Directly Modulated 1.55-Quantum Dot Lasers
S Banyoudeh, A Abdollahinia, O Eyal, F Schnabel, V Sichkovskyi, ...
IEEE Photonics Technology Letters 28 (21), 2451-2454, 2016
הרשאות: European Commission
Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
A Becker, V Sichkovskyi, M Bjelica, A Rippien, F Schnabel, M Kaiser, ...
Applied Physics Letters 110 (18), 2017
הרשאות: Federal Ministry of Education and Research, Germany
Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities
A Kors, K Fuchs, M Yacob, JP Reithmaier, M Benyoucef
Applied Physics Letters 110 (3), 2017
הרשאות: Federal Ministry of Education and Research, Germany
Deterministic Arrays of Epitaxially Grown Diamond Nanopyramids with Embedded Silicon‐Vacancy Centers
T Jaffe, N Felgen, L Gal, L Kornblum, JP Reithmaier, C Popov, ...
Advanced optical materials 7 (2), 1800715, 2019
הרשאות: Federal Ministry of Education and Research, Germany
Patterning of the surface termination of ultrananocrystalline diamond films for guided cell attachment and growth
A Voss, SR Stateva, JP Reithmaier, MD Apostolova, C Popov
Surface and Coatings Technology 321, 229-235, 2017
הרשאות: German Research Foundation
Rabi oscillations in a room-temperature quantum dash semiconductor optical amplifier
A Capua, O Karni, G Eisenstein, JP Reithmaier
Physical Review B 90 (4), 045305, 2014
הרשאות: European Commission
Influence of geometric disorder on the band structure of a photonic crystal: Experiment and theory
IV Ponomarev, M Schwab, G Dasbach, M Bayer, TL Reinecke, ...
Physical Review B—Condensed Matter and Materials Physics 75 (20), 205434, 2007
הרשאות: German Research Foundation
Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm
M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ...
Applied Physics Letters 112 (22), 2018
הרשאות: German Research Foundation
Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system
M Pieczarka, M Syperek, D Biegańska, C Gilfert, EM Pavelescu, ...
Applied Physics Letters 110 (22), 2017
הרשאות: German Research Foundation
1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices
S Bauer, V Sichkovskyi, O Eyal, T Septon, A Becker, I Khanonkin, ...
IEEE Nanotechnology Magazine 15 (2), 23-36, 2021
הרשאות: Federal Ministry of Education and Research, Germany
Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers
S Bauer, V Sichkovskyi, JP Reithmaier
Journal of Crystal Growth 491, 20-25, 2018
הרשאות: German Research Foundation
Plasma surface fluorination of ultrananocrystalline diamond films
W Kulisch, A Voss, D Merker, JP Reithmaier, R Merz, M Kopnarski, ...
Surface and Coatings Technology 302, 448-453, 2016
הרשאות: German Research Foundation
Influence of surface termination of ultrananocrystalline diamond films coated on titanium on response of human osteoblast cells: A proteome study
D Merker, Y Handzhiyski, R Merz, M Kopnarski, JP Reithmaier, C Popov, ...
Materials Science and Engineering: C 128, 112289, 2021
הרשאות: German Research Foundation
Strong attachment of circadian pacemaker neurons on modified ultrananocrystalline diamond surfaces
A Voss, HY Wei, Y Zhang, S Turner, G Ceccone, JP Reithmaier, M Stengl, ...
Materials Science and Engineering: C 64, 278-285, 2016
הרשאות: Research Foundation (Flanders), German Research Foundation
1.5-um quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
S Banyoudeh, A Abdollahinia, V Sichkovskyi, JP Reithmaier
Novel In-Plane Semiconductor Lasers XV 9767, 68-74, 2016
הרשאות: European Commission
On the principle operation of tunneling injection quantum dot lasers
I Khanonkin, S Bauer, V Mikhelashvili, O Eyal, M Lorke, F Jahnke, ...
Progress in Quantum Electronics 81, 100362, 2022
הרשאות: European Commission
High-speed directly modulated 1.5-um quantum dot lasers
S Banyoudeh, A Abdollahinia, O Eyal, F Schnabel, V Sichkovskyi, ...
Novel In-Plane Semiconductor Lasers XV 9767, 81-86, 2016
הרשאות: European Commission
Investigation of strong coupling between single quantum dot excitons and single photons in pillar microcavities
G Sęk, C Hofmann, JP Reithmaier, A Löffler, S Reitzenstein, M Kamp, ...
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 471-475, 2006
הרשאות: German Research Foundation
Magnetooptical investigations of single self assembled In0. 3Ga0. 7As quantum dots
T Mensing, S Reitzenstein, A Löffler, JP Reithmaier, A Forchel
Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 131-134, 2006
הרשאות: German Research Foundation
Narrow linewidth InAs/InP quantum dot DFB laser
T Septon, S Gosh, A Becker, V Sichkovskyi, F Schnabel, A Rippien, ...
Optical Fiber Communication Conference, W3A. 8, 2019
הרשאות: Federal Ministry of Education and Research, Germany
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