Artikelen met mandaten voor openbare toegang - Kang L. WangMeer informatie
Nergens beschikbaar: 44
Resistive switching materials for information processing
Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang
Nature Reviews Materials 5 (3), 173-195, 2020
Mandaten: US Department of Defense
Scale-invariant quantum anomalous Hall effect in magnetic topological insulators beyond the two-dimensional limit
X Kou, ST Guo, Y Fan, L Pan, M Lang, Y Jiang, Q Shao, T Nie, K Murata, ...
Physical review letters 113 (13), 137201, 2014
Mandaten: National Natural Science Foundation of China
Two-dimensional spintronics for low-power electronics
X Lin, W Yang, KL Wang, W Zhao
Nature Electronics 2 (7), 274-283, 2019
Mandaten: National Natural Science Foundation of China
Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry
G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ...
Nano letters 16 (3), 1981-1988, 2016
Mandaten: US National Science Foundation, US Department of Energy
Topological spintronics and magnetoelectronics
QL He, TL Hughes, NP Armitage, Y Tokura, KL Wang
Nature materials 21 (1), 15-23, 2022
Mandaten: US National Science Foundation, US Department of Energy, US Department of …
Above Room-Temperature Ferromagnetism in Wafer-Scale Two-Dimensional van der Waals Fe3GeTe2 Tailored by a Topological Insulator
H Wang, Y Liu, P Wu, W Hou, Y Jiang, X Li, C Pandey, D Chen, Q Yang, ...
ACS nano 14 (8), 10045-10053, 2020
Mandaten: National Natural Science Foundation of China
Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory
S Wang, H Lee, F Ebrahimi, PK Amiri, KL Wang, P Gupta
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
Mandaten: US National Science Foundation
Stateful reconfigurable logic via a single-voltage-gated spin hall-effect driven magnetic tunnel junction in a spintronic memory
H Zhang, W Kang, L Wang, KL Wang, W Zhao
IEEE Transactions on Electron Devices 64 (10), 4295-4301, 2017
Mandaten: National Natural Science Foundation of China
Deterministic spin–orbit torque switching by a light-metal insertion
A Razavi, H Wu, Q Shao, C Fang, B Dai, K Wong, X Han, G Yu, KL Wang
Nano letters 20 (5), 3703-3709, 2020
Mandaten: US National Science Foundation, US Department of Energy, National Natural …
Field-free spin–orbit torque switching of perpendicular magnetization by the Rashba interface
B Cui, H Wu, D Li, SA Razavi, D Wu, KL Wong, M Chang, M Gao, Y Zuo, ...
ACS applied materials & interfaces 11 (42), 39369-39375, 2019
Mandaten: US National Science Foundation, US Department of Energy, National Natural …
Field-free switching of perpendicular magnetization through voltage-gated spin-orbit torque
SZ Peng, JQ Lu, WX Li, LZ Wang, H Zhang, X Li, KL Wang, WS Zhao
2019 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2019
Mandaten: National Natural Science Foundation of China
Strong electrical manipulation of spin–orbit torque in ferromagnetic heterostructures
Y Yan, C Wan, X Zhou, G Shi, B Cui, J Han, Y Fan, X Han, KL Wang, ...
Advanced Electronic Materials 2 (10), 1600219, 2016
Mandaten: National Natural Science Foundation of China
Unveiling the guest effect of N-butylammonium iodide towards efficient and stable 2D-3D perovskite solar cells through sequential deposition process
Y Wang, H Xu, F Wang, D Liu, H Chen, H Zheng, L Ji, P Zhang, T Zhang, ...
Chemical Engineering Journal 391, 123589, 2020
Mandaten: National Natural Science Foundation of China
Direct mapping of charge distribution during lithiation of Ge nanowires using off-axis electron holography
Z Gan, M Gu, J Tang, CY Wang, Y He, KL Wang, C Wang, DJ Smith, ...
Nano letters 16 (6), 3748-3753, 2016
Mandaten: US Department of Energy
Control of spin-wave damping in YIG using spin currents from topological insulators
A Navabi, Y Liu, P Upadhyaya, K Murata, F Ebrahimi, G Yu, B Ma, Y Rao, ...
Physical review applied 11 (3), 034046, 2019
Mandaten: US Department of Defense
Analysis and compact modeling of magnetic tunnel junctions utilizing voltage-controlled magnetic anisotropy
H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang
IEEE Transactions on Magnetics 54 (4), 1-9, 2018
Mandaten: US National Science Foundation
Low-power, high-density spintronic programmable logic with voltage-gated spin Hall effect in magnetic tunnel junctions
H Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Magnetics Letters 7, 1-5, 2016
Mandaten: US National Science Foundation
Humidity-insensitive fabrication of efficient perovskite solar cells in ambient air
F Wang, Z Ye, H Sarvari, SM Park, A Abtahi, K Graham, Y Zhao, Y Wang, ...
Journal of Power Sources 412, 359-365, 2019
Mandaten: National Natural Science Foundation of China
A spintronic voltage-controlled stochastic oscillator for event-driven random sampling
H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang
IEEE Electron Device Letters 38 (2), 281-284, 2016
Mandaten: US National Science Foundation
Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale
Y Zhang, Z Zhang, L Wang, J Nan, Z Zheng, X Li, K Wong, Y Wang, ...
Applied Physics Letters 111 (5), 2017
Mandaten: National Natural Science Foundation of China
Publicatie- en financieringsgegevens worden automatisch vastgesteld door een computerprogramma