Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs AN Tallarico, S Stoffels, P Magnone, N Posthuma, E Sangiorgi, ...
IEEE Electron Device Letters 38 (1), 99-102, 2016
155 2016 Noise in Drain and Gate Current of MOSFETs With High- Gate StacksP Magnone, F Crupi, G Giusi, C Pace, E Simoen, C Claeys, L Pantisano, ...
IEEE Transactions on Device and Materials Reliability 9 (2), 180-189, 2009
143 2009 PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on and Underlying Degradation Mechanisms AN Tallarico, S Stoffels, N Posthuma, P Magnone, D Marcon, S Decoutere, ...
IEEE Transactions on Electron Devices 65 (1), 38-44, 2017
90 2017 Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks F Crupi, P Srinivasan, P Magnone, E Simoen, C Pace, D Misra, C Claeys
IEEE Electron Device Letters 27 (8), 688-691, 2006
69 2006 Impact of hot carriers on nMOSFET variability in 45-and 65-nm CMOS technologies P Magnone, F Crupi, N Wils, R Jain, H Tuinhout, P Andricciola, G Giusi, ...
IEEE Transactions on Electron Devices 58 (8), 2347-2353, 2011
68 2011 Power-based droop control in dc microgrids enabling seamless disconnection from upstream grids G Liu, T Caldognetto, P Mattavelli, P Magnone
IEEE Transactions on Power Electronics 34 (3), 2039-2051, 2018
64 2018 Suppression of second-order harmonic current for droop-controlled distributed energy resource converters in DC microgrids G Liu, T Caldognetto, P Mattavelli, P Magnone
IEEE Transactions on Industrial Electronics 67 (1), 358-368, 2019
47 2019 High-mobility 0.85nm-EOT Si0.45 Ge0.55 -pFETs: Delivering high performance at scaled VDD J Mitard, L Witters, MG Bardon, P Christie, J Franco, A Mercha, ...
2010 International Electron Devices Meeting, 10.6. 1-10.6. 4, 2010
47 2010 Understanding the basic advantages of bulk FinFETs for sub-and near-threshold logic circuits from device measurements F Crupi, M Alioto, J Franco, P Magnone, M Togo, N Horiguchi, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 59 (7), 439-442, 2012
46 2012 Performance analysis of rear point contact solar cells by three-dimensional numerical simulation M Zanuccoli, R De Rose, P Magnone, E Sangiorgi, C Fiegna
IEEE Transactions on Electron Devices 59 (5), 1311-1319, 2012
44 2012 Matching performance of FinFET devices with fin widths down to 10 nm P Magnone, A Mercha, V Subramanian, P Parvais, N Collaert, M Dehan, ...
IEEE electron device letters 30 (12), 1374-1376, 2009
44 2009 On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT E Acurio, F Crupi, P Magnone, L Trojman, G Meneghesso, F Iucolano
Solid-State Electronics 132, 49-56, 2017
38 2017 Analysis of an online stability monitoring approach for DC microgrid power converters A Khodamoradi, G Liu, P Mattavelli, T Caldognetto, P Magnone
IEEE Transactions on Power Electronics 34 (5), 4794-4806, 2018
36 2018 Analytical model for the 1∕ f noise in the tunneling current through metal-oxide-semiconductor structures F Crupi, G Giusi, G Iannaccone, P Magnone, C Pace, E Simoen, C Claeys
Journal of Applied Physics 106 (7), 2009
36 2009 FinFET mismatch in subthreshold region: Theory and experiments P Magnone, F Crupi, A Mercha, P Andricciola, H Tuinhout, RJP Lander
IEEE transactions on electron devices 57 (11), 2848-2856, 2010
35 2010 Low frequency noise and gate bias instability in normally OFF AlGaN/GaN HEMTs F Crupi, P Magnone, S Strangio, F Iucolano, G Meneghesso
IEEE Transactions on Electron Devices 63 (5), 2219-2222, 2016
33 2016 Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications G Paternoster, M Zanuccoli, P Bellutti, L Ferrario, F Ficorella, C Fiegna, ...
Solar Energy Materials and Solar Cells 134, 407-416, 2015
32 2015 Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices P Magnone, V Subramanian, B Parvais, A Mercha, C Pace, M Dehan, ...
Microelectronic Engineering 85 (8), 1728-1731, 2008
31 2008 Local shunting in multicrystalline silicon solar cells: Distributed electrical simulations and experiments D Giaffreda, P Magnone, M Meneghini, M Barbato, G Meneghesso, ...
IEEE Journal of Photovoltaics 4 (1), 40-47, 2013
30 2013 Understanding the impact of the doping profiles on selective emitter solar cell by two-dimensional numerical simulation R De Rose, M Zanuccoli, P Magnone, M Frei, E Sangiorgi, C Fiegna
IEEE Journal of Photovoltaics 3 (1), 159-167, 2012
30 2012