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Wenjing Zhang (张文静)
Wenjing Zhang (张文静)
Prof. of ICL 2D MOST, SHENZHEN UNIVERSITY, CHINA
Подтвержден адрес электронной почты в домене szu.edu.cn - Главная страница
Название
Процитировано
Процитировано
Год
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition
YH Lee, XQ Zhang, W Zhang, MT Chang, CT Lin, KD Chang, YC Yu, ...
Advanced Materials, 2012
39252012
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
KK Liu, W Zhang, YH Lee, YC Lin, MT Chang, CY Su, CS Chang, H Li, ...
Nano Letters, 2012
22762012
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
W Zhang, CP Chuu, JK Huang, CH Chen, ML Tsai, YH Chang, CT Liang, ...
Scientific reports 4 (1), 3826, 2014
12982014
High‐gain phototransistors based on a CVD MoS2 monolayer
W Zhang, JK Huang, CH Chen, YH Chang, YJ Cheng, LJ Li
Advanced materials 25 (25), 3456-3461, 2013
11042013
Rational molecular passivation for high-performance perovskite light-emitting diodes
W Xu, Q Hu, S Bai, C Bao, Y Miao, Z Yuan, T Borzda, AJ Barker, ...
Nature Photonics 13 (6), 418-424, 2019
10962019
Wafer Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization
YC Lin, W Zhang, JK Huang, KK Liu, YH Lee, CT Liang, CW Chu, LJ Li
Nanoscale, 2012
8562012
Highly efficient electrocatalytic hydrogen production by MoSx grown on graphene-protected 3D Ni foams
YH Chang, CT Lin, TY Chen, CL Hsu, YH Lee, W Zhang, KH Wei, LJ Li
Advanced materials 25 (5), 756-760, 2013
7752013
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
YH Chang, W Zhang, Y Zhu, Y Han, J Pu, JK Chang, WT Hsu, JK Huang, ...
ACS nano 8 (8), 8582-8590, 2014
6472014
Electrical and spectroscopic characterizations of ultra-large reduced graphene oxide monolayers
CY Su, Y Xu, W Zhang, J Zhao, X Tang, CH Tsai, LJ Li
Chemistry of Materials 21 (23), 5674-5680, 2009
5832009
Bandgap tunability at single-layer molybdenum disulphide grain boundaries
YL Huang, Y Chen, W Zhang, SY Quek, CH Chen, LJ Li, WT Hsu, ...
Nature communications 6 (1), 6298, 2015
4792015
High performance and stable all‐inorganic metal halide perovskite‐based photodetectors for optical communication applications
C Bao, J Yang, S Bai, W Xu, Z Yan, Q Xu, J Liu, W Zhang, F Gao
Advanced materials 30 (38), 1803422, 2018
4612018
Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers
W Zhang, MH Chiu, CH Chen, W Chen, LJ Li, ATS Wee
ACS nano 8 (8), 8653-8661, 2014
4552014
Direct formation of wafer scale graphene thin layers on insulating substrates by chemical vapor deposition
CY Su, AY Lu, CY Wu, YT Li, KK Liu, W Zhang, SY Lin, ZY Juang, ...
Nano letters 11 (9), 3612-3616, 2011
3952011
Graphene/MoS2 heterostructures for ultrasensitive detection of DNA hybridisation
PTK Loan, W Zhang, CT Lin, KH Wei, LJ Li, CH Chen
Advanced materials 26 (28), 4838-+, 2014
3392014
Ultrahigh-current-density niobium disulfide catalysts for hydrogen evolution
J Yang, AR Mohmad, Y Wang, R Fullon, X Song, F Zhao, I Bozkurt, ...
Nature materials 18 (12), 1309-1314, 2019
3302019
Giant photoluminescence enhancement in tungsten-diselenide–gold plasmonic hybrid structures
Z Wang, Z Dong, Y Gu, YH Chang, L Zhang, LJ Li, W Zhao, G Eda, ...
Nature communications 7 (1), 11283, 2016
3292016
High‐Performance, Room Temperature, Ultra‐Broadband Photodetectors Based on Air‐Stable PdSe2
Q Liang, Q Wang, Q Zhang, J Wei, SX Lim, R Zhu, J Hu, W Wei, C Lee, ...
Advanced Materials 31 (24), 1807609, 2019
3182019
Nitrogen-doped graphene sheets grown by chemical vapor deposition: Synthesis and influence of nitrogen impurities on carrier transport
YF Lu, ST Lo, JC Lin, W Zhang, JY Lu, FH Liu, CM Tseng, YH Lee, ...
ACS nano 7 (8), 6522-6532, 2013
3142013
Highly efficient restoration of graphitic structure in graphene oxide using alcohol vapors
CY Su, Y Xu, W Zhang, J Zhao, A Liu, X Tang, CH Tsai, Y Huang, LJ Li
ACS nano 4 (9), 5285-5292, 2010
3002010
Opening an electrical band gap of bilayer graphene with molecular doping
W Zhang, CT Lin, KK Liu, T Tite, CY Su, CH Chang, YH Lee, CW Chu, ...
ACS nano 5 (9), 7517-7524, 2011
2862011
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