Общедоступные статьи - Helena CastánПодробнее...
20 статей недоступны нигде
Study From Cryogenic to High Temperatures of the High- and Low-Resistance-State Currents of ReRAM Ni–HfO2–Si Capacitors
C Vaca, MB Gonzalez, H Castan, H Garcia, S Duenas, F Campabadal, ...
IEEE Transactions on Electron Devices 63 (5), 1877-1883, 2016
Финансирование: Government of Spain
Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
H Castán, S Dueñas, H García, OG Ossorio, LA Domínguez, B Sahelices, ...
Journal of Applied Physics 124 (15), 2018
Финансирование: Government of Spain
The role of defects in solar cells: Control and detection defects in solar cells
S Duenas, E Perez, H Castan, H Garcia, L Bailon
2013 Spanish Conference on Electron Devices, 301-304, 2013
Финансирование: Government of Spain
Dynamics of set and reset processes on resistive switching memories
S Dueñas, H Castán, OG Ossorio, H García
Microelectronic Engineering 216, 111032, 2019
Финансирование: Government of Spain
Atomic Layer Deposition and Characterization of Dysprosium‐Doped Zirconium Oxide Thin Films
A Tamm, J Kozlova, T Arroval, L Aarik, P Ritslaid, H Garcia, H Castan, ...
Chemical Vapor Deposition 21 (7-8-9), 181-187, 2015
Финансирование: Academy of Finland, Government of Spain
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
H García, G Vinuesa, E García-Ochoa, FL Aguirre, MB González, ...
Journal of Physics D: Applied Physics 56 (36), 365108, 2023
Финансирование: Government of Spain
Double swing quiescent-current: an experimental detection method of ferroelectricity in very leaky dielectric films
S Dueñas, H Castán, ÓG Ossorio, G Vinuesa, H García, K Kukli, ...
ECS Transactions 97 (1), 3, 2020
Финансирование: Academy of Finland, Government of Spain
Atomic layer deposition of zirconium dioxide from zirconium tetraiodide and ozone
K Kukli, M Kemell, K Mizohata, M Vehkamäki, K Kalam, H Castan, ...
ECS Journal of Solid State Science and Technology 7 (2), P1, 2018
Финансирование: Academy of Finland, Government of Spain
Effective Reduction of the Programing Pulse Width in Al: HfO2-based RRAM Arrays
ÓG Ossorio, E Pérez, S Dueñas, H Castán, H García, C Wenger
2019 Joint International EUROSOI Workshop and International Conference on …, 2019
Финансирование: German Research Foundation, Government of Spain
Resistive Switching Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films
OG Ossorio, S Dueñas, H Castán, A Tamm, K Kalam, H Seemen, K Kukli
2018 Spanish Conference on Electron Devices (CDE), 1-4, 2018
Финансирование: Government of Spain
The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications
S Dueñas, H Castán, H García, OG Ossorio, LA Domínguez, H Seemen, ...
Journal of Electronic Materials 47, 4938-4943, 2018
Финансирование: Government of Spain
Charge and current hysteresis in dysprosium-doped zirconium oxide thin films
H Castan, S Duenas, H Garcia, L Bailon, K Kukli, A Tamm, J Kozlova, ...
Microelectronic Engineering 147, 55-58, 2015
Финансирование: Academy of Finland, Government of Spain
Energy levels of defects created in silicon supersaturated with transition metals
H García, H Castán, S Dueñas, E García-Hemme, R García-Hernansaz, ...
Journal of Electronic Materials 47, 4993-4997, 2018
Финансирование: Government of Spain
Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2dielectrics
H García, H Castán, S Dueñas, E Pérez, L Bailón, A Tamm, K Kukli, ...
2015 10th Spanish Conference on Electron Devices (CDE), 1-4, 2015
Финансирование: Academy of Finland
Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
G Vinuesa, H García, ÓG Ossorio, E García-Ochoa, MB González, ...
2023 14th Spanish Conference on Electron Devices (CDE), 1-4, 2023
Финансирование: Government of Spain
Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
CSC González, B Sahelices, J Jiménez, OG Ossorio, H Castán, ...
2021 13th Spanish Conference on Electron Devices (CDE), 74-77, 2021
Финансирование: Government of Spain
A Complete Suite of Experimental Techniques for Electrical Characterization of Conventional and Incoming High-k Dielectric-Based Devices
S Dueñas, H Castán, H García, T Arroval, A Tamm, K Kukli, J Aarik
ECS transactions 72 (2), 153, 2016
Финансирование: Government of Spain
Electrical Properties and Nanoresistive Switching of Ni-HfO2-Si Capacitors
H García, M Gonzalez, C Vaca, H Castán, S Dueñas, F Campabadal, ...
ECS Transactions 72 (2), 335, 2016
Финансирование: Government of Spain
Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors
J Blasco, H Castán, H García, S Dueñas, J Suñé, M Kemell, K Kukli, ...
Microelectronics Reliability 54 (9-10), 1707-1711, 2014
Финансирование: Academy of Finland, Government of Spain
Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes
H García, H Castán, S Dueñas, L Bailón, PC Feijoo, MA Pampillón, ...
2013 Spanish Conference on Electron Devices, 285-288, 2013
Финансирование: Government of Spain
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