Enhanced Mg doping efficiency in P Kozodoy, M Hansen, SP DenBaars, UK Mishra
Applied Physics Letters 74 (24), 3681-3683, 1999
349 1999 Indium tin oxide contacts to gallium nitride optoelectronic devices T Margalith, O Buchinsky, DA Cohen, AC Abare, M Hansen, SP DenBaars, ...
Applied Physics Letters 74 (26), 3930-3932, 1999
324 1999 LED lighting efficacy: status and directions PM Pattison, M Hansen, JY Tsao
Comptes Rendus. Physique 19 (3), 134-145, 2018
253 2018 Polarization-enhanced Mg doping of AlGaN/GaN superlattices P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ...
Applied Physics Letters 75 (16), 2444-2446, 1999
232 1999 Optically and thermally detected deep levels in n -type Schottky and A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ...
Applied Physics Letters 76 (21), 3064-3066, 2000
170 2000 Hydrogen passivation of deep levels in A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars
Applied Physics Letters 77 (10), 1499-1501, 2000
161 2000 High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers P Fini, L Zhao, B Moran, M Hansen, H Marchand, JP Ibbetson, ...
Applied Physics Letters 75 (12), 1706-1708, 1999
133 1999 Influence of pressure on the optical properties of P Perlin, I Gorczyca, T Suski, P Wisniewski, S Lepkowski, NE Christensen, ...
Physical Review B 64 (11), 115319, 2001
94 2001 Simulation and optimization of 420-nm InGaN/GaN laser diodes J Piprek, RK Sink, MA Hansen, JE Bowers, SP DenBaars
Physics and Simulation of Optoelectronic Devices VIII 3944, 28-39, 2000
93 2000 Quantum information phases in space-time: measurement-induced entanglement and teleportation on a noisy quantum processor JC Hoke, M Ippoliti, D Abanin, R Acharya, M Ansmann, F Arute, K Arya, ...
arXiv preprint arXiv:2303.04792, 2023
85 * 2023 Impact of Ga/N flux ratio on trap states in A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ...
Applied physics letters 80 (5), 805-807, 2002
84 2002 Phase transition in random circuit sampling A Morvan, B Villalonga, X Mi, S Mandra, A Bengtsson, PV Klimov, Z Chen, ...
arXiv preprint arXiv:2304.11119, 2023
78 2023 Capture kinetics of electron traps in MBE‐Grown n‐GaN A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ...
physica status solidi (b) 228 (1), 309-313, 2001
78 2001 Higher efficiency InGaN laser diodes with an improved quantum well capping configuration M Hansen, J Piprek, PM Pattison, JS Speck, S Nakamura, SP DenBaars
Applied physics letters 81 (22), 4275-4277, 2002
73 2002 Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire M Hansen, P Fini, L Zhao, AC Abare, LA Coldren, JS Speck, ...
Applied Physics Letters 76 (5), 529-531, 2000
73 2000 Mg-rich precipitates in the p -type doping of InGaN-based laser diodes M Hansen, LF Chen, SH Lim, SP DenBaars, JS Speck
Applied physics letters 80 (14), 2469-2471, 2002
58 2002 Purification-based quantum error mitigation of pair-correlated electron simulations TE O’Brien, G Anselmetti, F Gkritsis, VE Elfving, S Polla, WJ Huggins, ...
Nature Physics 19 (12), 1787-1792, 2023
56 2023 Composite high reflectivity layer T Li, M Hansen, J Ibbetson
US Patent 7,915,629, 2011
49 2011 Structural and optical characteristics of YH Kwon, GH Gainer, S Bidnyk, YH Cho, JJ Song, M Hansen, ...
Applied physics letters 75 (17), 2545-2547, 1999
48 1999 Channeling as a mechanism for dry etch damage in GaN ED Haberer, CH Chen, A Abare, M Hansen, S Denbaars, L Coldren, ...
Applied Physics Letters 76 (26), 3941-3943, 2000
44 2000 