| Total-ionizing-dose effects in modern CMOS technologies HJ Barnaby IEEE transactions on nuclear science 53 (6), 3103-3121, 2006 | 840 | 2006 |
| Analysis of single-event transients in analog circuits P Adell, RD Schrimpf, HJ Barnaby, R Marec, C Chatry, P Calvel, C Barillot, ... IEEE Transactions on nuclear Science 47 (6), 2616-2623, 2000 | 169 | 2000 |
| The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors X Hu, BK Choi, HJ Barnaby, DM Fleetwood, RD Schrimpf, S Lee, ... IEEE Transactions on Nuclear Science 51 (2), 293-297, 2004 | 151 | 2004 |
| Conductive bridging random access memory—materials, devices and applications MN Kozicki, HJ Barnaby Semiconductor Science and Technology 31 (11), 113001, 2016 | 150 | 2016 |
| Compact modeling of total ionizing dose and aging effects in MOS technologies IS Esqueda, HJ Barnaby, MP King IEEE Transactions on Nuclear Science 62 (4), 1501-1515, 2015 | 137 | 2015 |
| Modeling ionizing radiation effects in solid state materials and CMOS devices HJ Barnaby, ML McLain, IS Esqueda, XJ Chen IEEE Transactions on Circuits and Systems I: Regular Papers 56 (8), 1870-1883, 2009 | 135 | 2009 |
| Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies IS Esqueda, HJ Barnaby, ML Alles IEEE transactions on nuclear science 52 (6), 2259-2264, 2005 | 119 | 2005 |
| Total ionizing dose effects in shallow trench isolation oxides F Faccio, HJ Barnaby, XJ Chen, DM Fleetwood, L Gonella, M McLain, ... Microelectronics Reliability 48 (7), 1000-1007, 2008 | 113 | 2008 |
| Reconfigurable memristive device technologies AH Edwards, HJ Barnaby, KA Campbell, MN Kozicki, W Liu, MJ Marinella Proceedings of the IEEE 103 (7), 1004-1033, 2015 | 112 | 2015 |
| Analytical model for proton radiation effects in bipolar devices HJ Barnaby, SK Smith, RD Schrimpf, DM Fleetwood, RL Pease IEEE Transactions on Nuclear Science 49 (6), 2643-2649, 2002 | 105 | 2002 |
| Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits M McLain, HJ Barnaby, KE Holbert, RD Schrimpf, H Shah, A Amort, ... IEEE Transactions on Nuclear Science 54 (6), 2210-2217, 2007 | 104 | 2007 |
| Mechanisms of enhanced radiation-induced degradation due to excess molecular hydrogen in bipolar oxides XJ Chen, HJ Barnaby, B Vermeire, K Holbert, D Wright, RL Pease, ... IEEE Transactions on Nuclear Science 54 (6), 1913-1919, 2007 | 104 | 2007 |
| Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells W Chen, HJ Barnaby, MN Kozicki IEEE Electron Device Letters 37 (5), 580-583, 2016 | 99 | 2016 |
| Characterization of enhanced low dose rate sensitivity (ELDRS) effects using gated lateral PNP transistor structures RL Pease, DG Platteter, GW Dunham, JE Seiler, HJ Barnaby, ... IEEE transactions on nuclear science 51 (6), 3773-3780, 2004 | 90 | 2004 |
| Proton radiation response mechanisms in bipolar analog circuits HJ Barnaby, RD Schrimpf, AL Sternberg, V Berthe, CR Cirba, RL Pease IEEE Transactions on Nuclear Science 48 (6), 2074-2080, 2001 | 89 | 2001 |
| Monolithically integrated RRAM-and CMOS-based in-memory computing optimizations for efficient deep learning S Yin, Y Kim, X Han, H Barnaby, S Yu, Y Luo, W He, X Sun, JJ Kim, J Seo IEEE Micro 39 (6), 54-63, 2019 | 85 | 2019 |
| A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells W Chen, R Fang, MB Balaban, W Yu, Y Gonzalez-Velo, HJ Barnaby, ... Nanotechnology 27 (25), 255202, 2016 | 85 | 2016 |
| The effects of hydrogen on the enhanced low dose rate sensitivity (ELDRS) of bipolar linear circuits RL Pease, PC Adell, BG Rax, XJ Chen, HJ Barnaby, KE Holbert, ... IEEE Transactions on Nuclear Science 55 (6), 3169-3173, 2008 | 85 | 2008 |
| Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory R Fang, Y Gonzalez Velo, W Chen, KE Holbert, MN Kozicki, H Barnaby, ... Applied Physics Letters 104 (18), 2014 | 82 | 2014 |
| Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices PC Adell, HJ Barnaby, RD Schrimpf, B Vermeire IEEE Transactions on Nuclear Science 54 (6), 2174-2180, 2007 | 77 | 2007 |