บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Xiyuan Tangดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 28
9.3 A 40kHz-BW 90dB-SNDR Noise-Shaping SAR with 4× Passive Gain and 2nd-Order Mismatch Error Shaping
J Liu, X Wang, Z Gao, M Zhan, X Tang, N Sun
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 158-160, 2020
ข้อกำหนด: National Natural Science Foundation of China
A 13-bit 0.005-mm2 40-MS/s SAR ADC With kT/C Noise Cancellation
J Liu, X Tang, W Zhao, L Shen, N Sun
IEEE Journal of Solid-State Circuits 55 (12), 3260-3270, 2020
ข้อกำหนด: National Natural Science Foundation of China
TD-SRAM: Time-domain-based in-memory computing macro for binary neural networks
J Song, Y Wang, M Guo, X Ji, K Cheng, Y Hu, X Tang, R Wang, R Huang
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (8), 3377-3387, 2021
ข้อกำหนด: National Natural Science Foundation of China
27.1 A 250kHz-BW 93dB-SNDR 4th-Order Noise-Shaping SAR Using Capacitor Stacking and Dynamic Buffering
J Liu, D Li, Y Zhong, X Tang, N Sun
2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 369-371, 2021
ข้อกำหนด: National Natural Science Foundation of China
A 90-dB-SNDR calibration-free fully passive noise-shaping SAR ADC with 4× passive gain and second-order DAC mismatch error shaping
J Liu, X Wang, Z Gao, M Zhan, X Tang, CK Hsu, N Sun
IEEE Journal of Solid-State Circuits 56 (11), 3412-3423, 2021
ข้อกำหนด: National Natural Science Foundation of China
A 10-b 600-MS/s 2-way time-interleaved SAR ADC with mean absolute deviation-based background timing-skew calibration
J Song, K Ragab, X Tang, N Sun
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (8), 2876-2887, 2019
ข้อกำหนด: US National Science Foundation
Error-feedback mismatch error shaping for high-resolution data converters
J Liu, CK Hsu, X Tang, S Li, G Wen, N Sun
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (4), 1342-1354, 2018
ข้อกำหนด: National Natural Science Foundation of China
A two-step ADC with a continuous-time SAR-based first stage
L Shen, Y Shen, Z Li, W Shi, X Tang, S Li, W Zhao, M Zhang, Z Zhu, N Sun
IEEE Journal of Solid-State Circuits 54 (12), 3375-3385, 2019
ข้อกำหนด: US National Science Foundation, US National Institutes of Health
A 10-b 750µW 200MS/s fully dynamic single-channel SAR ADC in 40nm CMOS
X Tang, L Chen, J Song, N Sun
ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 413-416, 2016
ข้อกำหนด: US National Science Foundation
16.5 A 13b 0.005mm2 40MS/s SAR ADC with kT/C Noise Cancellation
J Liu, X Tang, W Zhao, L Shen, N Sun
2020 IEEE International Solid-State Circuits Conference-(ISSCC), 258-260, 2020
ข้อกำหนด: National Natural Science Foundation of China
A 10-bit 100-MS/s SAR ADC with always-on reference ripple cancellation
Y Shen, X Tang, X Xin, S Liu, Z Zhu, N Sun
IEEE Transactions on Circuits and Systems I: Regular Papers 69 (10), 3965-3975, 2022
ข้อกำหนด: National Natural Science Foundation of China
A 0.014mm2 10kHz-BW Zoom-Incremental-Counting ADC Achieving 103dB SNDR and 100dB Full-Scale CMRR
L Jie, M Zhan, X Tang, N Sun
2022 IEEE International Solid-State Circuits Conference (ISSCC) 65, 1-3, 2022
ข้อกำหนด: National Natural Science Foundation of China
A 65 nm 73 kb SRAM-based computing-in-memory macro with dynamic-sparsity controlling
X Qiao, J Song, X Tang, H Luo, N Pan, X Cui, R Wang, Y Wang
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (6), 2977-2981, 2022
ข้อกำหนด: National Natural Science Foundation of China
A 1-GS/s 20 MHz-BW Capacitive-Input Continuous-Time ADC Using a Novel Parasitic Pole-Mitigated Fully Differential VCO
A Mukherjee, M Gandara, B Xu, S Li, L Shen, X Tang, D Pan, N Sun
IEEE Solid-State Circuits Letters 2 (1), 1-4, 2019
ข้อกำหนด: US National Science Foundation
7.3 a 28nm 38-to-102-TOPS/W 8b multiply-less approximate digital SRAM compute-in-memory macro for neural-network inference
Y He, H Diao, C Tang, W Jia, X Tang, Y Wang, J Yue, X Li, H Yang, H Jia, ...
2023 IEEE International Solid-State Circuits Conference (ISSCC), 130-132, 2023
ข้อกำหนด: National Natural Science Foundation of China
A 28 nm 16 kb bit-scalable charge-domain transpose 6T SRAM in-memory computing macro
J Song, X Tang, X Qiao, Y Wang, R Wang, R Huang
IEEE Transactions on Circuits and Systems I: Regular Papers 70 (5), 1835-1845, 2023
ข้อกำหนด: National Natural Science Foundation of China
A 16Kb transpose 6T SRAM in-memory-computing macro based on robust charge-domain computing
J Song, Y Wang, X Tang, R Wang, R Huang
2021 IEEE Asian Solid-State Circuits Conference (A-SSCC), 1-3, 2021
ข้อกำหนด: National Natural Science Foundation of China
A Bandwidth-Adaptive Pipelined SAR ADC With Three-Stage Cascoded Floating Inverter Amplifier
X Tang, X Yang, J Liu, Z Wang, W Shi, DZ Pan, N Sun
IEEE Journal of Solid-State Circuits 58 (9), 2564-2574, 2023
ข้อกำหนด: National Natural Science Foundation of China
A 10-b 800MS/s time-interleaved SAR ADC with fast timing-skew calibration
J Song, K Ragab, X Tang, N Sun
2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), 73-76, 2016
ข้อกำหนด: US National Science Foundation
A calibration-free 15-level/cell eDRAM computing-in-memory macro with 3T1C current-programmed dynamic-cascoded MLC achieving 233-to-304-TOPS/W 4b MAC
J Song, X Tang, H Luo, H Zhang, X Qiao, Z Sun, X Yang, Y Wang, ...
2023 IEEE Custom Integrated Circuits Conference (CICC), 1-2, 2023
ข้อกำหนด: National Natural Science Foundation of China
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