| Biodegradable and highly deformable temperature sensors for the internet of things GA Salvatore, J Sülzle, F Dalla Valle, G Cantarella, F Robotti, P Jokic, ... Advanced Functional Materials 27 (35), 1702390, 2017 | 216 | 2017 |
| High-performance flexible nanoscale transistors based on transition metal dichalcogenides A Daus, S Vaziri, V Chen, Ç Köroğlu, RW Grady, CS Bailey, HR Lee, ... Nature Electronics 4 (7), 495-501, 2021 | 172 | 2021 |
| High-specific-power flexible transition metal dichalcogenide solar cells K Nassiri Nazif*, A Daus*, J Hong, N Lee, S Vaziri, A Kumar, F Nitta, ... Nature Communications 12, 7034, 2021 | 137 | 2021 |
| Ultralow–switching current density multilevel phase-change memory on a flexible substrate AI Khan*, A Daus*, R Islam, KM Neilson, HR Lee, HSP Wong, E Pop Science 373 (6560), 1243-1247, 2021 | 108 | 2021 |
| Photo-induced room-temperature gas sensing with a-IGZO based thin-film transistors fabricated on flexible plastic foil S Knobelspies, B Bierer, A Daus, A Takabayashi, GA Salvatore, ... Sensors 18 (2), 358, 2018 | 71 | 2018 |
| Flexible a-IGZO phototransistor for instantaneous and cumulative UV-exposure monitoring for skin health S Knobelspies, A Daus, G Cantarella, L Petti, N Munzenrieder, G Tröster, ... Advanced Electronic Materials 2 (10), 1600273, 2016 | 71 | 2016 |
| Strain-Enhanced Mobility of Monolayer MoS2 IM Datye, A Daus, RW Grady, K Brenner, S Vaziri, E Pop Nano Letters 22 (20), 8052-8059, 2022 | 70 | 2022 |
| Buckled thin-film transistors and circuits on soft elastomers for stretchable electronics G Cantarella, C Vogt, R Hopf, N Münzenrieder, P Andrianakis, L Petti, ... ACS applied materials & interfaces 9 (34), 28750-28757, 2017 | 70 | 2017 |
| Design of engineered elastomeric substrate for stretchable active devices and sensors G Cantarella, V Costanza, A Ferrero, R Hopf, C Vogt, M Varga, L Petti, ... Advanced Functional Materials 28 (30), 1705132, 2018 | 65 | 2018 |
| Metal‐halide perovskites for gate dielectrics in field‐effect transistors and photodetectors enabled by PMMA lift‐off process A Daus, C Roldán‐Carmona, K Domanski, S Knobelspies, G Cantarella, ... Advanced Materials 30 (23), 1707412, 2018 | 56 | 2018 |
| Flexible In–Ga–Zn–O thin-film transistors on elastomeric substrate bent to 2.3% strain G Cantarella, N Münzenrieder, L Petti, C Vogt, L Büthe, GA Salvatore, ... IEEE Electron Device Letters 36 (8), 781-783, 2015 | 44 | 2015 |
| Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs A Daus, C Vogt, N Münzenrieder, L Petti, S Knobelspies, G Cantarella, ... IEEE Transactions on Electron Devices 64 (7), 2789-2796, 2017 | 38 | 2017 |
| Ferroelectric‐like charge trapping thin‐film transistors and their evaluation as memories and synaptic devices A Daus, P Lenarczyk, L Petti, N Münzenrieder, S Knobelspies, ... Advanced Electronic Materials 3 (12), 1700309, 2017 | 37 | 2017 |
| Fast-response flexible temperature sensors with atomically thin molybdenum disulfide A Daus, M Jaikissoon, AI Khan, A Kumar, RW Grady, KC Saraswat, E Pop Nano Letters 22 (15), 6135-6140, 2022 | 35 | 2022 |
| Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators A Daus, C Vogt, N Münzenrieder, L Petti, S Knobelspies, G Cantarella, ... Journal of Applied Physics 120 (24), 2016 | 27 | 2016 |
| Gain-tunable complementary common-source amplifier based on a flexible hybrid thin-film transistor technology L Petti, F Loghin, G Cantarella, C Vogt, N Münzenrieder, A Abdellah, ... IEEE Electron Device Letters 38 (11), 1536-1539, 2017 | 21 | 2017 |
| Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment S Knobelspies, A Takabayashi, A Daus, G Cantarella, N Münzenrieder, ... Solid-State Electronics 150, 23-27, 2018 | 19 | 2018 |
| Potential of transition metal dichalcogenide transistors for flexible electronics applications A Piacentini, A Daus, Z Wang, MC Lemme, D Neumaier Advanced Electronic Materials 9 (8), 2300181, 2023 | 13 | 2023 |
| Flexible CMOS electronics based on p-type Ge2Sb2Te5and n-type InGaZnO4semiconductors A Daus, S Han, S Knobelspies, G Cantarella, C Vogt, N Münzenrieder, ... 2017 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2017 | 13 | 2017 |
| Resistive switching and current conduction mechanisms in hexagonal boron nitride threshold memristors with nickel electrodes L Völkel, D Braun, M Belete, S Kataria, T Wahlbrink, K Ran, K Kistermann, ... Advanced Functional Materials 34 (15), 2300428, 2024 | 12 | 2024 |
Eric PopPease-Ye Professor of Electrical Eng., Materials Sci., App. Phys. @ Stanford & SLAC在 stanford.edu 的电子邮件经过验证