受强制性开放获取政策约束的文章 - Luisa Petti了解详情
无法在其他位置公开访问的文章：28 篇
Flexible self-aligned amorphous InGaZnO thin-film transistors with submicrometer channel length and a transit frequency of 135 MHz
N Münzenrieder, L Petti, C Zysset, T Kinkeldei, GA Salvatore, G Tröster
IEEE Transactions on Electron Devices 60 (9), 2815-2820, 2013
强制性开放获取政策： Swiss National Science Foundation
Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm
N Münzenrieder, L Petti, C Zysset, GA Salvatore, T Kinkeldei, C Perumal, ...
2012 International Electron Devices Meeting, 5.2. 1-5.2. 4, 2012
强制性开放获取政策： Swiss National Science Foundation
Review of recent trends in flexible metal oxide thin-film transistors for analog applications
G Cantarella, J Costa, T Meister, K Ishida, C Carta, F Ellinger, P Lugli, ...
Flexible and Printed Electronics 5 (3), 033001, 2020
强制性开放获取政策： German Research Foundation
Flexible InGaZnO TFTs WithAbove 300 MHz
N Münzenrieder, K Ishida, T Meister, G Cantarella, L Petti, C Carta, ...
IEEE Electron Device Letters 39 (9), 1310-1313, 2018
强制性开放获取政策： Swiss National Science Foundation, German Research Foundation
A 70° phase margin OPAMP with positive feedback in flexible a-IGZO TFT technology
R Shabanpour, K Ishida, T Meister, N Münzenrieder, L Petti, G Salvatore, ...
2015 IEEE 58th International Midwest Symposium on Circuits and Systems …, 2015
强制性开放获取政策： German Research Foundation
Flexible In–Ga–Zn–O-based circuits with two and three metal layers: Simulation and fabrication study
G Cantarella, K Ishida, L Petti, N Münzenrieder, T Meister, R Shabanpour, ...
IEEE Electron Device Letters 37 (12), 1582-1585, 2016
强制性开放获取政策： Swiss National Science Foundation, German Research Foundation
A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model
R Shabanpour, T Meister, K Ishida, B Boroujeni, C Carta, F Ellinger, ...
2017 15th IEEE International New Circuits and Systems Conference (NEWCAS …, 2017
强制性开放获取政策： Swiss National Science Foundation, German Research Foundation
Cherry-Hooper amplifiers with 33 dB gain at 400 kHz BW and 10 dB gain at 3.5 MHz BW in flexible self-aligned a-IGZO TFT technology
R Shabanpour, T Meister, K Ishida, BK Boroujeni, C Carta, U Jörges, ...
2014 International Symposium on Intelligent Signal Processing and …, 2014
强制性开放获取政策： German Research Foundation
High gain amplifiers in flexible self-aligned a-IGZO thin-film-transistor technology
R Shabanpour, T Meister, K Ishida, L Petti, N Münzenrieder, GA Salvatore, ...
2014 21st IEEE International Conference on Electronics, Circuits and Systems …, 2014
强制性开放获取政策： German Research Foundation
A 2.62 MHz 762 µW cascode amplifier in flexible a-IGZO thin-film technology for textile and wearable-electronics applications
R Shabanpour, K Ishida, C Perumal, BK Boroujeni, T Meister, C Carta, ...
2013 International Semiconductor Conference Dresden-Grenoble (ISCDG), 1-4, 2013
强制性开放获取政策： German Research Foundation
Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology
R Shabanpour, T Meister, K Ishida, B Kheradmand-Boroujeni, C Carta, ...
Analog integrated circuits and signal processing 87, 213-222, 2016
强制性开放获取政策： German Research Foundation
Radio frequency electronics in a-IGZO TFT technology
K Ishida, T Meister, R Shabanpour, BK Boroujeni, C Carta, G Cantarella, ...
2016 23rd international workshop on active-matrix flatpanel displays and …, 2016
强制性开放获取政策： German Research Foundation
3.5 mW 1MHz AM detector and digitally-controlled tuner in a-IGZO TFT for wireless communications in a fully integrated flexible system for audio bag
T Meister, K Ishida, C Carta, R Shabanpour, N Münzenrieder, L Petti, ...
2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits), 1-2, 2016
强制性开放获取政策： German Research Foundation
High performance flexible electronics for biomedical devices
GA Salvatore, N Münzenrieder, C Zysset, T Kinkeldei, L Petti, G Tröster
2014 36th Annual International Conference of the IEEE Engineering in …, 2014
强制性开放获取政策： Swiss National Science Foundation
Silicone/Carbon Black-Filled Elastomer-Based Self-Healing Strain Sensor
NS Khaanghah, H de Souza Oliveira, R Riaz, F Catania, MAC Angeli, ...
IEEE Sensors Letters 7 (5), 1-4, 2023
强制性开放获取政策： Swiss National Science Foundation
Long-Term Aging of Al2O3 Passivated and Unpassivated Flexible a-IGZO TFTs
JC Costa, APYP Kermani, G Cantarella, L Petti, C Vogt, A Daus, ...
IEEE Transactions on Electron Devices 67 (11), 4934-4939, 2020
强制性开放获取政策： German Research Foundation, UK Engineering and Physical Sciences Research …
20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas
K Ishida, R Shabanpour, T Meister, BK Boroujeni, C Carta, F Ellinger, ...
2015 IEEE International Symposium on Radio-Frequency Integration Technology …, 2015
强制性开放获取政策： German Research Foundation
Digital output flexible tilt sensor with conductive microspheres
L Büthe, C Vogt, L Petti, G Cantarella, G Tröster, N Munzenrieder
2015 IEEE SENSORS, 1-4, 2015
强制性开放获取政策： European Commission
Improved stability of carbon nanotube electrolyte-gated field-effect transistors through lipophilic membrane encapsulation
A Tagliaferri, B Shkodra, M Petrelli, P Ibba, L Petti, P Lugli, MAC Angeli
2023 IEEE BioSensors Conference (BioSensors), 1-4, 2023
强制性开放获取政策： Swiss National Science Foundation
Oxide Thin-Film Electronics for the Front-End Conditioning of Flexible Magnetic Field Sensors
N Münzenrieder, G Cantarella, L Petti, J Costa
TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings, 294, 2021
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, National Institute …
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