受强制性开放获取政策约束的文章 - Heinz von Seggern了解详情
无法在其他位置公开访问的文章：33 篇
A Color‐Tuneable Organic Light‐Emitting Transistor
EJ Feldmeier, M Schidleja, C Melzer, H von Seggern
Advanced Materials 22 (32), 3568-3572, 2010
强制性开放获取政策： German Research Foundation
Complementary organic field effect transistors by ultraviolet dielectric interface modification
N Benson, M Schidleja, C Melzer, R Schmechel, H von Seggern
Applied physics letters 89 (18), 2006
强制性开放获取政策： German Research Foundation
Polarization-switching dynamics in bulk ferroelectrics with isometric and oriented anisometric pores
R Khachaturyan, S Zhukov, J Schultheiß, C Galassi, C Reimuth, J Koruza, ...
Journal of Physics D: Applied Physics 50 (4), 045303, 2016
强制性开放获取政策： German Research Foundation
The Einstein relation in systems with trap-controlled transport
F Neumann, YA Genenko, H Von Seggern
Journal of applied physics 99 (1), 2006
强制性开放获取政策： German Research Foundation
Investigation of Charge‐Carrier Injection in Ambipolar Organic Light‐Emitting Field‐Effect Transistors
M Schidleja, C Melzer, H von Seggern
Advanced Materials 21 (10‐11), 1172-1176, 2009
强制性开放获取政策： German Research Foundation
Tubular fluoropolymer arrays with high piezoelectric response
S Zhukov, D Eder-Goy, C Biethan, S Fedosov, BX Xu, H von Seggern
Smart Materials and Structures 27 (1), 015010, 2017
强制性开放获取政策： German Research Foundation
High performance fluorinated polyethylene propylene ferroelectrets with an air-filled parallel-tunnel structure
X Ma, H von Seggern, GM Sessler, S Zhukov, OB Dali, M Kupnik, X Zhang
Smart Materials and Structures 30 (1), 015002, 2020
强制性开放获取政策： 国家自然科学基金委员会, German Research Foundation
Pyroelectricity in polyvinylidene fluoride: Influence of polarization and charge
SN Fedosov, H Von Seggern
Journal of Applied Physics 103 (1), 2008
强制性开放获取政策： German Research Foundation
Residual Halide Groups in Gilch-Polymerized Poly(p-phenylene-vinylene) and Their Impact on Performance and Lifetime of Organic Light-Emitting Diodes
A Fleissner, K Stegmaier, C Melzer, H Von Seggern, T Schwalm, ...
Chemistry of Materials 21 (18), 4288-4298, 2009
强制性开放获取政策： German Research Foundation
Multiple ink-jet printed zinc tin oxide layers with improved TFT performance
B Sykora, D Wang, H von Seggern
Applied Physics Letters 109 (3), 2016
强制性开放获取政策： Helmholtz Association
Mechanical energy harvesting with ferroelectrets
X Zhang, H von Seggern, GM Sessler, M Kupnik
IEEE Electrical Insulation Magazine 36 (6), 47-58, 2020
强制性开放获取政策： 国家自然科学基金委员会, German Research Foundation
Blue-Greenish Electroluminescent Poly(p-phenylenevinylene) Developed for Organic Light-Emitting Diode Applications
N Vilbrandt, A Gassmann, H von Seggern, M Rehahn
Macromolecules 49 (5), 1674-1680, 2016
强制性开放获取政策： German Research Foundation
Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies
E Hildebrandt, J Kurian, J Zimmermann, A Fleissner, H von Seggern, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009
强制性开放获取政策： German Research Foundation
Influence of Li-codoping on the radiation hardness of CsBr: Eu2+
J Zimmermann, S Hesse, H Von Seggern, M Fuchs, W Knüpfer
Journal of applied physics 101 (11), 2007
强制性开放获取政策： German Research Foundation
Rodlike tetracene derivatives
M Roth, M Ahles, C Gawrisch, T Schwalm, R Schmechel, C Melzer, ...
Chemistry–A European Journal 23 (54), 13445-13454, 2017
强制性开放获取政策： German Research Foundation
Eco-friendly high-sensitive piezoelectrets for force myography
OB Dali, S Zhukov, R Chadda, A Kasanski, H von Seggern, X Zhang, ...
IEEE Sensors Journal 23 (3), 1943-1951, 2022
强制性开放获取政策： 国家自然科学基金委员会, German Research Foundation
Importance of screening charge dynamics on polarization switching in polyvinylidene fluoride
H Von Seggern, SN Fedosov
Applied Physics Letters 91 (6), 2007
强制性开放获取政策： German Research Foundation
Printing technologies for integration of electronic devices and sensors
TT Baby, GC Marques, F Neuper, SA Singaraju, S Garlapati, ...
Functional Nanostructures and Sensors for CBRN Defence and Environmental …, 2020
强制性开放获取政策： German Research Foundation, Helmholtz Association
The organic light-emitting field-effect transistor
M Schidleja, C Melzer, H Seggern
Frequenz 62 (3-4), 100-103, 2008
强制性开放获取政策： German Research Foundation
Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film
Y Zhou, X Yan, E Kroke, R Riedel, D Probst, A Thissen, R Hauser, ...
Materialwissenschaft und Werkstofftechnik: Entwicklung, Fertigung, Prüfung …, 2006
强制性开放获取政策： German Research Foundation
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